FGA25N120ANTD
1200V NPT Trench IGBT
| 產(chǎn)品數(shù)量 | 2000 |
| 型號(hào) | FGA25N120(IGBT) |
| 限電壓 | 1200（V） |
| 限電流 | 25（A） |
| 用途 | 電磁爐 |
| 產(chǎn)品說明 | 原裝現(xiàn)貨 |
原裝 FSC童品牌 TO-封裝 30只/管 450只/盒 3600只/箱
Featur
•NPT Trench Technology, Positive temperature coefficient
•Low saturation voltage: VCE(sat), t = 2.0V
@ IC = 25A and TC = 25°C
•Low switching loss: Eoff, t = 0.96mJ
@ IC = 25A and TC = 25°C
•Extremely enhanced avalanche capability
Dcription
Using Fairchild's proprietary trench dign and advanced NPT
technology, the 1200V NPT IGBT offers superior conduion
and switching performanc, high avalanche ruggedns and
easy parallel operation.
This device is well suited for the ronant or soft switching appli-
cation such as induion heating, microwave oven, etc.
Absolute Maximum Ratings
Symbol Dcription FGA25N120ANTD Units
VC Colleor-Emitter Voltage 1200 V
VG Gate-Emitter Voltage &plun; 20 V
IC Colleor Current @ TC = 25°C 50 A
Colleor Current @ TC = 100°C 25 A
ICM Pulsed Colleor Current (Note 1) 90 A
IF Diode Continuous Forward Current @ TC = 100°C 25 A
IFM Diode Maximum Forward Current 150 A
PD Maximum Power Dissipation @ TC = 25°C 312 W
Maximum Power Dissipation @ TC = 100°C 125 W
TJ Operating Junion Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temp. for soldering
Purpos, 1/8” from case for 5 seconds
300 °C
Thermal Charaeristics
Symbol Parameter T. Max. Units
RθJC Thermal Ristance, Junion-to-Case for IGBT -- 0.4 °C/W
RθJC Thermal Ristance, Junion-to-Case for Diode -- 2.0 °C/W
RθJA Thermal Ristance, Junion-to-Ambient -- 40 °C/W