- 品牌/商標(biāo)：萬(wàn)州
- 企業(yè)類型：制造商
- 原產(chǎn)地：珠海
一、 尺寸；Size
二、描述；Description
L5IR4P-B系列發(fā)射管是采用GaAlAs技術(shù)的高功率紅外發(fā)射二極管，采用藍(lán)色的塑料封裝。在一個(gè)相似的波長(zhǎng)內(nèi)與標(biāo)準(zhǔn)GaAs比較，GaAlAs技術(shù)的這些發(fā)射二極管達(dá)到超過(guò)100%輻射功率改善。正向電壓在低電流和高脈沖電流工作條件下大致對(duì)應(yīng)于標(biāo)準(zhǔn)技術(shù)。
所以這些發(fā)射二極管是理想的作為標(biāo)準(zhǔn)發(fā)射器件的高性能產(chǎn)品。
L5IR4P-Bis a high efficiency infrared emitting diode in GaAlAs technology, molded in BLUE, blue grey tinted plastic packages
In comparison with the standard GaAs on GaAlAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology.
Therefore these emitters are ideally suitable as high performance replacements of standard emitters.
三、 基本參數(shù)；Principal character
|
型號(hào) Model No. |
材料 Material |
波長(zhǎng)Wavelength λp（nm） |
顏色 Lens Color |
發(fā)射角度 Viewing Angle 2θ1/2 |
|
L5IR4P-B |
GaAlAs/GaAs |
940 |
BLUE |
120 |
四、 極限參數(shù)；Absolute Maximum Ratings at Ta=25℃
|
參數(shù) Parameter |
測(cè)試條件 Test Conditions |
符號(hào)Symbol |
數(shù)值 Value |
單位Unit |
|
正向峰值電流 Peak Forward Current |
|
Ifm |
100 |
mA |
|
正向脈沖電流 Surge Forward Current |
tp/T = 0.5, tp = 100 μs |
Ifsm |
1.5 |
A |
|
耗散功率 Power Dissipation |
|
Pv |
150 |
mW |
|
結(jié)溫 Junction Temperature |
|
Tj |
100 |
℃ |
|
工作溫度范圍 Operating |
|
Tamb |
-25 +80 |
℃ |
|
存儲(chǔ)溫度范圍 |
|
Tstg |
-55 +100 |
℃ |
|
焊接溫度 Soldering Temperature |
t ≦ 5sec, 3 mm from case |
Tsd |
260 |
℃ |
五、光電特性；Electrical Optical Characteristics at Ta= 25℃
|
參數(shù) Parameter |
測(cè)試條件 Test Conditions |
符號(hào) Symbol |
小 Min |
典型 Typ |
Max |
單位 Unit |
|
正向電壓 Forward Voltage |
IF = 50mA |
VF |
1.25 |
|
1.5 |
V |
|
正向電流 Forward Current |
|
If |
|
50 |
|
mA |
|
反向電壓 Reverse voltage |
IR=10μA |
VR |
5 |
|
|
V |
|
反向漏電流 Reverse Current |
VR=5V |
IR |
|
|
10 |
μA |
|
發(fā)射強(qiáng)度 Radiant Intensity |
IF=50 mA |
Ie |
1 |
|
5 |
mW/sr |
|
結(jié)電容 Junction Capacitance |
VR = 0 V, f = 1 MHz, E = 0 |
Cj |
|
25 |
|
Pf |
|
功率衰減系數(shù) Temp. Coefficient of e |
IF = 50 mA |
TKe |
|
-0.6 |
|
%/K |
|
發(fā)射角度 Angle of Half Intensity |
|
2θ1/2 |
|
120 |
|
deg |
|
峰值波長(zhǎng) Peak Wavelength |
IF = 50 mA |
λp |
|
940 |
|
nm |
|
光譜偏差范圍 Spectral Bandwidth |
IF = 50 mA |
△λ |
|
50 |
|
nm |
|
波段衰減系數(shù) Temp. Coefficient of λp |
IF = 50 mA |
TKλp |
|
0.2 |
|
nm/K |
|
上升時(shí)間 Rise Time |
IF = 50 mA |
tr |
|
800 |
|
ns |
|
下降時(shí)間 Fall Time |
IF = 50 mA |
tf |
|
800 |
|
ns |
